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Physica Status Solidi (A) Applied Research

Volumn 174, Issue 1, 1999, Pages 101-115

Defects in device grade homoepitaxial diamond thin films grown with ultra-low CH4/H2 conditions by microwave-plasma chemical vapor deposition

(5) Takeuchi, D a,c Watanabe, H a,b,c Yamanaka, S a,b,c Okushi, H a,c Kajimura, K a,b

a ELECTROTECHNICAL LABORATORY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18444393197 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199907)174:1<101::AID-PSSA101>3.0.CO;2-O Document Type: Article

Times cited : (49)

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