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Physica Status Solidi (A) Applied Research

Volumn 174, Issue 1, 1999, Pages 59-64

Low-compensated boron-doped homoepitaxial diamond films using trimeihylboron

(5) Yamanaka, S a,b,c Takeuchi, D a,c Watanabe, H a,b,c Okushi, H a,c Kajimura, K a,b

a ELECTROTECHNICAL LABORATORY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c WASEDA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039109118 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199907)174:1<59::AID-PSSA59>3.0.CO;2-A Document Type: Article

Times cited : (50)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.