High-power 2.2-μm diode lasers with metamorphic arsenic-free heterostructures

IEEE Photonics Technology Letters

Volumn 23, Issue 5, 2011, Pages 317-319

  Kipshidze, Gela ^a,c   Hosoda, Takashi ^a   Sarney, Wendy L ^a   Shterengas, Leon ^a   Belenky, Gregory ^b  

^a Stony Brook University   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Power Photonic Corporation   (United States)

Author keywords

Diode laser; GaSb; infrared; metamorphic

Indexed keywords

CONTINUOUS WAVES; DIODE LASERS; GASB; HETEROSTRUCTURES; HIGH-POWER; INFRARED; METAMORPHIC; MISFIT DISLOCATIONS; ROOM TEMPERATURE; SOLID SOURCE MOLECULAR BEAM EPITAXY; VIRTUAL SUBSTRATES;

ANTIMONY; ARSENIC; CONTINUOUS WAVE LASERS; CRYSTALS; DIODES; FIELD EFFECT TRANSISTORS; GALLIUM; HETEROJUNCTIONS; INFRARED LASERS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR LASERS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 79951991789     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2103053     Document Type: Article

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