Type-I GaSb-based laser diodes operating in 3.1- to 3.3-μ wavelength range

IEEE Photonics Technology Letters

Volumn 22, Issue 10, 2010, Pages 718-720

  Hosoda, Takashi ^a   Kipshidze, Gela ^a   Tsvid, Gene ^a   Shterengas, Leon ^a   Belenky, Gregory ^a  

^a Stony Brook University   (United States)

Author keywords

Diode laser; GaSb; Midinfrared; Type I

Indexed keywords

ACTIVE REGIONS; ALGAINASSB; CONTINUOUS WAVES; DEVICE PERFORMANCE; DIODE LASERS; GASB-BASED LASERS; HETEROSTRUCTURES; HOLE CONFINEMENT; INDIUM CONTENT; MIDINFRARED; QUANTUM WELL; ROOM TEMPERATURE; WAVELENGTH RANGES;

DIODES; GALLIUM ALLOYS; INDIUM;

QUANTUM WELL LASERS;

EID: 77951729683     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2044659     Document Type: Article

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