Long-wavelength In 0.53Ga 0.47As metamorphic p-i-n photodiodes on GaAs substrates

IEEE Photonics Technology Letters

Volumn 13, Issue 2, 2001, Pages 151-153

  Jang, J H ^b   Cueva, G ^b   Dumka, D C ^b   Hoke, W E ^c   Lemonias, P J ^c   Adesida, I ^a,b  

^a IEEE   (United States)

^b United States of America   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

Dark current; GaAs; In 0.53Ga 0.47As; Long wavelengths; Metamorphic p i n photodiode; Optical communication

Indexed keywords

DARK CURRENTS; METAMORPHIC PHOTODIODES;

BANDWIDTH; CURRENT DENSITY; OPTICAL COMMUNICATION; OPTOELECTRONIC DEVICES; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

PHOTODIODES;

EID: 0035246674     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.910518     Document Type: Article

References (9)

1. Dark current and diffusion length in InGaAs photodiodes grown on GaAs
2. 40 Gbit/s 1.55 μm pin-HEMT photoreceiver monolithically integrated on 3 in GaAs substrate
3. 10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs
4. Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates
5. 0.47As metamorphic HEMT's on GaAs substrate
6. Ultrawide-band/high frequency photodetectors
7. A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector
8. 1-y photodiodes with dark current limited by diffusion, generation-recombination, and tunneling
9. 1-xAs (x < 0.4) epilayers grown on GaAs substrates