Proton-implantation-isolated separate absorption charge and multiplication 4H-SiC avalanche photodiodes

IEEE Photonics Technology Letters

Volumn 23, Issue 5, 2011, Pages 299-301

  Zhou, Qiugui ^a   McIntosh, Dion ^a   Liu, Han Din ^a   Campbell, Joe C ^a  

^a University of Virginia   (United States)

Author keywords

Avalanche photodiode (APD); photodetector

Indexed keywords

EXTERNAL QUANTUM EFFICIENCY; PROTON IMPLANTATION;

OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES; PROTONS; SILICON CARBIDE;

AVALANCHE PHOTODIODES;

EID: 79951981621     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2101057     Document Type: Article

References (17)

1. F. Yan, Y. Luo, J. H. Zhao, and G. H. Olsen, "4H-SiC visible blind UV avalanche photodiodes," Electron Lett., vol. 35, pp. 929-930, 1999.
2. X. Guo, A. Beck, B. Yang, and J. C. Campbell, "Low dark current 4H-SiC avalanche photodiodes," Electron. Lett., vol. 39, no. 23, pp. 1673-1674, 2003.
3. H.-D. Liu, D. McIntosh, X. Bai, H. Pan, M. Liu, J. C. Campbell, and H. Y. Cha, "4H-SiC PIN recessed-window avalanche photodiode with high quantum efficiency," IEEE Photon. Technol.Lett, vol. 20, no. 18, pp. 1551-1553, Sep. 15, 2008.
4. H.-Y. Cha, S. Soloviev, G. Dunne, S. Zelakiewicz, P. Waldrab, and P. Sandvik, "Comparison of 4H-SiC separate absorption and multipli-cation region avalanche photodiodes structures for UV detection," in Proc. IEEE Sensors, 2006, pp. 14-17.
5. J. C. Carrano, D. J. H. Lambert, C. J. Eiting, C. J. Collins, T. Li, S. Wang, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, "GaN avalanche photodiodes," Appl. Phys. Lett., vol. 76, no. 7, pp. 924-926, Feb. 2000.
6. J. B. Limb, D. Yoo, J. H. Ryou, W. Lee, S. C. Shen, R. D. Dupuis, M. L. Reed, C. J. Collins, M. Wraback, D. Hanser, E. Preble, N. M. Williams, and K. Evans, "GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition," Appl. Phys. Lett., vol. 89, no.011112, 2006.
7. A. O. Konstantinov, Q. Wahab, N. Nordell, and U. Lindefelt, "Ioniza-tion rates and critical fields in 4H silicon carbide," Appl. Phys. Lett., vol. 71, no. 90, 1997.
8. X. Bai, X. Guo, D. C. McIntosh, H.-D. Liu, and J. C. Campbell, "High detection sensitivity of ultraviolet 4H-SiC (Pubitemid 350142396)
9. X. Guo, L. B. Rowland, G. T. Dunne, J. A. Fronheiser, P. M. Sandvik, A. L. Beck, and J. C. Campbell, "Demonstration ofultraviolet separate absorption and multiplication 4H-Si Cavalanche photodiodes," IEEE Photon. Technol. Lett., vol. 18, no. 1, pp. 136-138, Jan. 1, 2006. (Pubitemid 46542516)
10. H. W. Ruegg, "An optimized avalanche photodiode," IEEE Trans. Electron Devices, vol. ED-14, no. 5, pp. 239-251, May 1967.
11. G.A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, and P. Sandvik, "Deep UV photon-counting detectors and applications," Proc. SPIE, vol. 7320, no. 73200J-15, 2009.
12. Q. Zhou, H.-D. Liu, D. C. McIntosh, C. Hu, X. Zheng, and J. C. Campbell, "Proton-implantation-isolated 4H-SiC avalanche photodi-odes," IEEE Photon. Technol. Lett., vol. 21, no. 23, pp. 1734-1736, Dec. 15, 2009.
13. F. Yan, C. Qin, J. H. Zhao, M. Weiner, B. K. Ng, J. P. R. David, and R. C. Tozer, "Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2 positive bevel," Electron. Lett., vol. 38, no. 7, pp. 335-336, Mar. 2002. (Pubitemid 34300420)
14. A. L. Beck, B. Yang, X. Guo, and J. C. Campbell, "Edgebreakdown in 4H-SiC avalanche photodiodes," IEEE J. Quantum Electron., vol. 40, no. 3, pp. 321-324, Mar. 2004.
15. B. K. Ng, J. P. R. David, R. C. Tozer, G. J. Rees, F. Yan, J. H. Zhao, and M. Weiner, "Nonlocal effects in thin 4H-SiC UV avalanche photo-diodes," IEEE Trans. Electron Devices, vol. 50, no. 8, pp. 1724-1732, Aug. 2003.
16. H.-D. Liu, H. Pan, C. Hu, D. McIntosh, Z. Lu, J. Campbell, Y. Kang, and M. Morse, "Avalanche photodiodepunch-through gain determina-tion through excess noise analysis," J. Appl. Phys., vol. 106, no. 6, pp. 064507-064507, 2009.
17. X. Guo, A. L. Beck, J. C. Campbell, D. Emerson, and J. Sumakeris, "Spatial nonuniformity of4H-SiC avalanche photodiodes at high gain," IEEEJ. QuantumElectron., vol. 41, no. 10, pp. 1213-1216, Oct. 2005. (Pubitemid 41447435)