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Journal of the Physical Society of Japan

Volumn 80, Issue 2, 2011, Pages

Semiconductor-metal transition and band-gap tuning in quasi-free-standing epitaxial bilayer graphene on SiC

(4) Sugawara, Katsuaki a Sato, Takafumi a Kanetani, Kohei a Takahashi, Takashi a

a TOHOKU UNIVERSITY (Japan)

Author keywords

Band gap; Bilayer graphene; Hydrogen; Potassium

Indexed keywords

EID: 79951640915 PISSN: 00319015 EISSN: 13474073 Source Type: Journal
DOI: 10.1143/JPSJ.80.024705 Document Type: Article

Times cited : (16)

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