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Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1187-1189

Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures

(4) Okumura, Hironori a Horita, Masahiro a Kimoto, Tsunenobu a Suda, Jun a

a KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; BI-LAYER; NUCLEATION LAYERS; PLANAR DEFECT; RF PLASMA; SACRIFICIAL OXIDATION; SIC SUBSTRATES; STACKING MISMATCH BOUNDARIES; STACKING SEQUENCE; STRUCTURE AND MORPHOLOGY; TERRACE STRUCTURE; THREADING DISLOCATION;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DEFECT STRUCTURES; DEFECTS; EPITAXIAL GROWTH; LANDFORMS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SOIL CONSERVATION; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 67650000198 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200880934 Document Type: Article

Times cited : (6)

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