Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC (0001)

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2094-2096

  Okumura, Hironori ^a   Kimoto, Tsunenobu ^a   Suda, Jun ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

AlN; Dislocations; Growth; MBE

Indexed keywords

ALN; ALN LAYERS; BI-LAYER; DISLOCATIONS; GROWTH; LAYER-BY-LAYER GROWTH; MBE; NUCLEATION LAYERS; PREIRRADIATION; RF PLASMA; THREADING DISLOCATION DENSITIES; VICINAL SUBSTRATES;

EPITAXIAL GROWTH; IRRADIATION; MOLECULAR BEAMS; NITRIDES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE;

SEMICONDUCTOR GROWTH;

EID: 77955812461     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983579     Document Type: Conference Paper

References (11)

1. M.A. Khan, M.S. Shur, J.N. Kusnia, Q. Chen, J. Burm, and W. Schaff, Appl. Phys. Lett. 66, 1085 (1995).
2. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature 441, 325 (2006).
3. B.N. Sverdlov, G.A. Martin, H. Morkoc, and D.J. Smith, Appl. Phys. Lett. 67, 2063 (1995).
4. P. Ruterana and G. Nouet, Phys. Status Solidi B 227, 177 (2001).
5. D.N. Zakharov, Z.L. Weber, B. Wagner, Z.J. Reitmeier, E.A. Preble, and R.F. Davis, Phys. Rev. B 71, 235334 (2005).
6. N. Onojima, J. Suda, and H. Matsunami, Jpn. J. Appl. Phys. 42, L445 (2003).
7. S. Nakamura, T. Kimoto, H. Matsunami, S. Tanaka, N. Teraguchi, and A. Suzuki, Appl. Phys. Lett. 76, 3412 (2000).
8. H. Okumura, M. Horita, J. Suda, and T. Kimoto, Appl. Surf. Sci. 254, 7858 (2008).
9. H. Okumura, M. Horita, T. Kimoto, and J. Suda, Phys. Status Solidi A 206, 1187 (2009).
10. A. Nakajima, Y. Furukawa, H. Yokoya, S. Yamaguchi, and H. Yonezu, Jpn. J. Appl. Phys. 45, 2422 (2006).
11. W.E. Hoke, A. Torabi, J.J. Mosca, and T.D. Kennedy, J. Vac. Sci. Technol. B 25, 978 (2007).