Impact of surface step heights of 6H-SiC (0 0 0 1) vicinal substrates in heteroepitaxial growth of 2H-AlN

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7858-7860

  Okumura, H ^a   Horita, M ^a   Kimoto, T ^a   Suda, J ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

AlN; MBE; SiC; Surface control; XRD

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SILICON CARBIDE; X RAY DIFFRACTION;

ALUMINUM NITRIDE (ALN); CRYSTALLINE QUALITY; HIGH TEMPERATURE GAS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SILICON CARBIDES (SIC); STEP-AND-TERRACE STRUCTURES; SURFACE CONTROLS; VICINAL SUBSTRATES;

SUBSTRATES;

EID: 51249090125     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.165     Document Type: Article

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