Interface effects in the electronic structure of TiO2 deposited on MgO, Al2O3 and SiO2 substrates

Surface Science

Volumn 605, Issue 5-6, 2011, Pages 539-544

  Soriano, L ^a   Sanchez Agudo M ^b   Mossanek, R J O ^c   Abbate, M ^c   Fuentes, G G ^d   Bressler, P R ^e,g   Alvarez, L ^f   Mendez J ^f   Gutierrez A ^a   Sanz, J M ^a  

^a INSTITUTO NICOLÁS CABRERA   (Spain)

^b CIDA   (Spain)

^c FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^d AIN   (Spain)

^e HAHN MEITNER INSTITUT   (Germany)

^f INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^g Fraunhofer Gesellschaft Brussels Unit   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; BINDING ENERGY; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); MAGNESIA; SILICA; SINGLE CRYSTALS; SUBSTRATES; TITANIUM DIOXIDE; VALENCE BANDS; X RAY ABSORPTION;

CONFIGURATION-INTERACTION CALCULATIONS; CRYSTAL-FIELD SPLITTING; INTERFACE EFFECT; OCTAHEDRAL CRYSTAL FIELDS; RESONANT PHOTOEMISSION;

TITANIUM;

EID: 79751533264     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.12.013     Document Type: Article

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