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Physical Review B

Volumn 40, Issue 15, 1989, Pages 10481-10487

Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)

(1) Pashley, M D a

a PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35949013015 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.40.10481 Document Type: Article

Times cited : (758)

References (19)

1
- 35949011476
- (1988) Phys. Rev. Lett. , vol.60 , pp. 2176
- Pashley, M.D.¹ Haberern, K.W.² Friday, W.³ Woodall, J.M.⁴ Kirchner, P.D.⁵

2
- 0002022739
- The (001) surface of molecular-beam epitaxially grown GaAs studied by scanning tunneling microscopy
- (1988) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , vol.6 , pp. 1468
- Pashley, M.D.¹ Haberern, K.W.² Woodall, J.M.³

3
- 2342417670
- Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfaces
- (1987) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films , vol.5 , pp. 834
- Chadi, D.J.¹

4
- 0000344324
- Molecular-beam epitaxy growth mechanisms on GaAs(100) surfaces
- (1987) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , vol.5 , pp. 1482
- Farrell, H.H.¹ Harbison, J.P.² Peterson, L.D.³

5
- 0001388928
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates
- (1988) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , vol.6 , pp. 1378
- Gaines, J.M.¹ Petroff, P.M.² Kroemer, H.³ Simes, R.J.⁴ Geels, R.S.⁵ English, J.H.⁶

6
- 0003464333
- Freeman, San Francisco
- (1980) Electronic Structure and the Properties of Solids
- Harrison, W.A.¹

7
- 0000073627
- Theory of polar semiconductor surfaces
- (1979) Journal of Vacuum Science and Technology , vol.16 , pp. 1492
- Harrison, W.A.¹

8
- 84912898277
- Reflection high-energy electron diffraction observations during growth of ZnSxSe1−x(0≤x≤1) by molecular-beam epitaxy
- (1988) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , vol.6 , pp. 769
- Cornelissen, H.J.¹ Cammack, D.A.² Dalby, R.J.³

9
- 0012066313
- (1978) J. Cryst. Growth , vol.44 , pp. 387
- Neave, J.H.¹ Joyce, B.A.²

10
- 0000744376
- J. F. van der Veen
- (1983) Phys. Rev. B , vol.27 , pp. 4966
- Larsen, P.K.¹ Neave, J.H.² Dobson, P.J.³ Joyce, B.A.⁴

11
- 0001292811
- (1989) Phys. Rev. Lett. , vol.62 , pp. 563
- Sauvage-Simkin, M.¹ Pinchaux, R.² Massies, J.³ Calverie, P.⁴ Jedrecy, N.⁵ Bonnet, J.⁶ Robinson, I.K.⁷

12
- 0000985809
- (1987) Phys. Rev. Lett. , vol.58 , pp. 1192
- Feenstra, R.M.¹ Stroscio, J.A.² Tersoff, J.³ Fein, A.P.⁴

13
- 3342916018
- (1984) Phys. Rev. Lett. , vol.52 , pp. 1911
- Chadi, D.J.¹

14
- 0001043821
- (1984) Phys. Rev. Lett. , vol.52 , pp. 1693
- Tong, S.Y.¹ Xu, G.² Mei, W.N.³

15
- 84926555459
- Haberern, K.W.¹ Pashley, M.D.²

16
- 24544469813
- (1986) Phys. Rev. Lett. , vol.57 , pp. 102
- Chadi, D.J.¹

17
- 0000443742
- and J. F. van der Veen
- (1985) Surf. Sci. , vol.150 , pp. 245
- Smit, L.¹ Derry, T.E.²

18
- 0346101014
- Summary Abstract: Molecular-beam epitaxy and atomic-layer epitaxy growth mechanisms for ZnSe(100)
- and J. L. de Miguel
- (1988) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , vol.6 , pp. 767
- Farrell, H.H.¹ Tamargo, M.C.²

19
- 0024606154
- (1989) J. Cryst. Growth , vol.95 , pp. 269
- Pukite, P.R.¹ Petrich, G.S.² Batra, S.³ Cohen, P.I.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.