Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Semiconductor Science and Technology

Volumn 26, Issue 2, 2011, Pages

  Wang, Yaqi ^a   Alur, Siddharth ^a   Sharma, Yogesh ^a   Tong, Fei ^a   Thapa, Resham ^a   Gartland, Patrick ^a   Issacs Smith, Tamara ^a   Ahyi, Claude ^a   Williams, John ^a   Park, Minseo ^a   Johnson, Mark ^b   Paskova, Tanya ^c   Preble, Edward A ^c   Evans, Keith R ^c  

^a AUBURN UNIVERSITY   (United States)

^b North Carolina State University   (United States)

^c KYMA TECHNOLOGIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN SUBSTRATE; HIGH BREAKDOWN; I-V MEASUREMENTS; IMPURITY CONCENTRATION; LOW LEAKAGE; MAXIMUM BREAKDOWN VOLTAGE; ON-STATE RESISTANCE; REVERSE BIAS; REVERSE LEAKAGE CURRENT; SCHOTTKY CONTACTS; SCHOTTKY DIODES; TEMPERATURE DEPENDENT; TI/AL/NI/AU; TRANSPORTATION MECHANISM;

DIODES; GALLIUM NITRIDE; OHMIC CONTACTS; PLATINUM; SCHOTTKY BARRIER DIODES;

GALLIUM ALLOYS;

EID: 79751480762     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/2/022002     Document Type: Article

References (15)

1. Zhang A P, Johnson J W, Ren F, Han J, Polyakov A Y, Smirnov N B, Govorkov A V, Redwing J M, Lee K P and Pearton S J 2001 Appl. Phys. Lett. 78 823
2. Bandić Z Z, Bridger P M, Piquette E C, McGill T C, Vaudo R P, Phanse V M and Redwing J M 1999 Appl. Phys. Lett. 74 1266
3. Zhou Y, Wang D, Ahyi C, Tin C-C, Williams J, Park M, Williams N M and Hanser A 2006 Solid-State Electron. 50 1744
4. Zhang A P, Johnson J W, Luo B, Ren F, Pearton S J, Park S S, Park Y J and Chyi J-I 2001 Appl. Phys. Lett. 79 1555
5. Lu H, Zhang R, Xiu X, Xie Z, Zheng Y and Li Z 2007 Appl. Phys. Lett. 91 172113
6. Saitoh Y, Sumiyoshi K, Okada M, Horii T, Miyazaki T, Shiomi H, Ueno M, Katayama K, Kiyama K and Nakamura T 2010 Appl. Phys. Express 3 081001
7. Shi J Y, Yu L P, Wang Y Z, Zhang G Y and Zhang H 2002 Appl. Phys. Lett. 80 2293
8. Paskova T et al 2008 Proc. SPIE 6894 68940D
9. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley)
10. Cibils R M and Buitrago R H 1985 J. Appl. Phys. 58 1075
11. Guo J D, Feng M S, Guo R J, Pan F M and Chang C Y 1995 Appl. Phys. Lett. 67 2657
12. Hacke P, Detchprohm T, Hiramatsu K and Sawaki N 1993 Appl. Phys. Lett. 63 2676
13. Yu L S, Liu Q Z, Qiao Q J, Lau S S and Redwing J 1998 J. Appl. Phys. 84 2099
14. Miller E J, Dang X Z and Yu E T 2000 J. Appl. Phys. 88 5951
15. Hashizume T, Kotani J and Hasegawa H 2004 Appl. Phys. Lett. 84 4884