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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

Photoluminescence study of near-surface GaN/AlN superlattices

(6) Paskov, P P a Monemar, B a Paskova, T b Kamiyama, S c Amano, H c Akasaki, I c

a LINKÖPING UNIVERSITY (Sweden)

b KYMA TECHNOLOGIES INC (United States)

c MEIJO UNIVERSITY (Japan)

Author keywords

GaN AlN heterostructures; Photoluminescence; Superlattices; Two electron gas

Indexed keywords

CHARGED PARTICLES; CHEMICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; CUBIC BORON NITRIDE; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTROACUPUNCTURE; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; ELECTRON GAS; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LEAKAGE (FLUID); MAGNETISM; METALLIZING; MICROFLUIDICS; MOSFET DEVICES; NITRIDES; PIGMENTS; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SILICON; SONOLUMINESCENCE; SURFACES;

(1 1 0) SURFACE; (LIQUID + LIQUID) EQUILIBRIUM; BAND GAPS; CAPPING LAYER (GC LAYER); CHEMICAL VAPORS; ELECTRON ACCUMULATION; ELECTRON DISTRIBUTIONS; EMISSION PROPERTIES; ENERGY POSITIONS; NITRIDE MATERIALS; OPTICAL INSTRUMENTATION; PHOTO EXCITED HOLES; PHOTO-GENERATED CARRIERS; PHOTOLUMINESCENCE STUDY; POLARIZATION FIELD (PE); QUANTUM WELLS; THICKNESS RATIOS;

ELECTRONS;

EID: 42149139982 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.759452 Document Type: Conference Paper

Times cited : (3)

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