Surface activation-based nanobonding and interconnection at room temperature

Journal of Micromechanics and Microengineering

Volumn 21, Issue 2, 2011, Pages

  Howlader, M M R ^a   Yamauchi, A ^b   Suga, T ^c  

^a MCMASTER UNIVERSITY   (Canada)

^b Bondtech Co Ltd   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT ACCURACY; AMORPHOUS LAYER; BIOMEDICAL SYSTEMS; BONDING STRENGTH; FAST ATOM BEAMS; FLIP CHIP; HIGH PRECISION; HIGH-DENSITY; HIGH-DENSITY INTERCONNECTION; INTERCONNECT SYSTEMS; MEMS PACKAGING; ROOM TEMPERATURE; ROUGH SURFACES; SMOOTH SURFACE; STUD-BUMPS; SURFACE ACTIVATION; SURFACE-ACTIVATED BONDING METHODS; THREE DIMENSIONAL INTEGRATION; THROUGH SILICON VIAS; TRANSMISSION SYSTEMS; VOID-FREE;

ALIGNMENT; ELECTRONICS PACKAGING; GOLD; METAL CLADDING; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE PROPERTIES; WAFER BONDING;

SURFACE ROUGHNESS;

EID: 79551715854     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/21/2/025009     Document Type: Article

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