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Volumn 109, Issue 2, 2011, Pages

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED LAYERS; BASAL PLANES; BEFORE AND AFTER; CONCENTRATION REGION; DEFECT DIFFUSION; DISLOCATION LOOP; ELECTRICAL AND OPTICAL PROPERTIES; EXTENDED DEFECT; HIGH TEMPERATURE; IMPLANTED LAYERS; NITROGEN IMPLANTATION; NITROGEN IONS; NONRADIATIVE DEFECTS; OUT OF EQUILIBRIUM; P-TYPE DOPING; PRISMATIC PLANES; PROMISING MATERIALS; RESIDUAL DEFORMATION; SHORT WAVELENGTHS; STACKING FAULT ENERGIES; STRUCTURAL FEATURE; SUBSURFACE REGIONS; UNIAXIAL DEFORMATION; XRD; XRD MEASUREMENTS; ZNO; ZNO SUBSTRATE;

EID: 79551676698     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3537917     Document Type: Article
Times cited : (49)

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