Ferroelectric nonvolatile memory technology and its applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1516-1520

  Sumi, Tatsumi ^a   Judai, Yuji ^a   Hirano, Kanji ^a   Ito, Toyoji ^a   Mikawa, Takumi ^a   Takeo, Masato ^a   Azuma, Masamichi ^b   Hayashi, Shin Ichiro ^b   Uemoto, Yasuhiro ^b   Arita, Koji ^b   Nasu, Toru ^b   Nagano, Yoshihisa ^b   Inoue, Astuo ^b   Matsuda, Akihiro ^b   Fuji, Eiji ^b   Shimada, Yasuhiro ^b   Otsuki, Tatsuo ^b  

^a Matsuhita Electronics Corporation   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Embedded microcontroller; Endurance; Ferroelectric; Imprint; Integrated ferroelectronics; Nonvolatile memory; RFID tag; SrBi2Ta2O9

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DURABILITY; FILM PREPARATION; NONVOLATILE STORAGE; RELIABILITY; SOL-GELS; STRONTIUM COMPOUNDS; THIN FILMS;

EMBEDDED MICROCONTROLLER; FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY; IMPRINT; INTEGRATED FERROELECTRONICS; LIQUID SOURCE MISTED CHEMICAL DEPOSITION; SPIN ON SOL-GEL METHOD;

FERROELECTRIC MATERIALS;

EID: 0030080525     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1516     Document Type: Article

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