Kinetic Monte Carlo simulation for the striation distribution of void defects in czochralski silicon growth

Molecular Simulation

Volumn 36, Issue 9, 2010, Pages 663-669

  Lee, Sang Hun ^a,b   Oh, Hyun Jung ^a   Kim, Do Hyun ^b  

^a LG Siltron Inc   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

computer simulation; defect generation; Monte Carlo method; point defects; semiconducting silicon

Indexed keywords

CZOCHRALSKI SILICON; DEFECT GENERATION; EXPERIMENTAL ANALYSIS; INTERSTITIAL OXYGEN; KINETIC LATTICE MONTE CARLO; KINETIC MONTE CARLO SIMULATION; MESOSCALE; MICRO-DEFECTS; MONTE CARLO; OXYGEN CONCENTRATIONS; OXYGEN PROFILES; VACANCY COMPLEXES; VACANCY-OXYGEN COMPLEXES; VOID DEFECTS;

COMPUTATIONAL METHODS; COMPUTER SIMULATION; DEFECTS; OXYGEN; OXYGEN VACANCIES; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS;

MONTE CARLO METHODS;

EID: 77955907829     PISSN: 08927022     EISSN: 10290435     Source Type: Journal    
DOI: 10.1080/08927021003720512     Document Type: Article

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