Distribution of grown-in crystal defects in silicon crystals formed by point defect diffusion during melt-growth: Disappearance of the oxidation induced stacking faults-ring

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 1 A, 1996, Pages 1-9

  Habu, Ryuichi ^a,b   Tomiura, Azusa ^a  

^a NIPPON STEEL CORPORATION   (Japan)

^b UACJ CORPORATION   (Japan)

Author keywords

AOP zone; CZ crystal; Diffusion; Drift motion; Grown in crystal defects; OSF ring; Pair annihilation reaction; Self interstitials; Silicon; Uphill diffusion; Vacancies

Indexed keywords

CHEMICAL REACTIONS; CRYSTAL GROWTH FROM MELT; DIFFUSION; ELECTRONIC DENSITY OF STATES; NUMERICAL METHODS; SEMICONDUCTING SILICON; SILICON WAFERS; SINGLE CRYSTALS; STACKING FAULTS;

CZOCHRALSKI SILICON SINGLE CRYSTAL; GROWN-IN CRYSTAL DEFECT DISTRIBUTION; OXIDATION INDUCED STACKING FAULTS RING;

CRYSTAL DEFECTS;

EID: 0029775451     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.1     Document Type: Article

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