Global parameterization of multiple point-defect dynamics models in silicon

Journal of the Electrochemical Society

Volumn 150, Issue 11, 2003, Pages

  Frewen, Thomas A ^a   Sinno, Talid ^a   Dornberger, Erich ^b   Hoelzl, Robert ^b   Von Ammon, Wilfried ^b   Bracht, Hartmut ^c  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b SILTRONIC AG   (Germany)

^c UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADAPTIVE ALGORITHMS; CRYSTAL GROWTH FROM MELT; CRYSTALLINE MATERIALS; MATHEMATICAL MODELS; REGRESSION ANALYSIS; SILICON; SIMULATED ANNEALING; THERMODYNAMIC PROPERTIES;

ADAPTIVE MESH REFINEMENT ALGORITHM; DENSITY FUNCTIONAL THEORY; INTERSTITIAL-VACANCY BOUNDARY; INTRINSIC POINT DEFECTS; STOCHASTIC OPTIMIZATION;

POINT DEFECTS;

EID: 0242666141     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1610470     Document Type: Article

References (38)

1. H. Bracht, N. A. Stolwijk, and H. Mehrer, Phys. Rev. B, 52-23, 16542 (1995).
2. T. Sinno, in Semiconductor Silicon 2002, H. R. Huff, L. Fabry, and S. Kishino, Editors, PV 2002-2, p. 212, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
3. H. Bracht, N. A. Stolwijk, and H. Mehrer, Mater. Sci. Forum, 143-147, 785 (1993).
4. A. Masuhr, H. Bracht, N. A. Stolwijk, H. Overhof, and H. Mehrer, Semicond. Sci. Technol., 14, 435 (1999).
5. H. Bracht, MRS Bull., 25, 22 (2000).
6. M. Hasebe, Y. Takeoka, S. Shinoyama, and S. Naito, Jpn. J. Appl. Phys., Part 1, 28, 1999 (1989).
7. E. Dornberger and W. von Ammon, J. Electrochem. Soc., 143, 1648 (1996).
8. T. Abe and H. Harada, Mater. Res. Soc. Symp. Proc., 14, 1 (1983).
9. R. Brown, T. Kinney, P. Sackinger, and D. Bornside, J. Cryst. Growth, 97, 99 (1989).
10. F. Dupret, Y. Ryckmans, P. Wouters, and M. J. Crochet, J. Cryst. Growth, 79, 84 (1986).
11. V. V. Voronkov, J. Cryst. Growth, 59, 625 (1982).
12. T. Sinno, R. A. Brown, W. von Ammon, and E. Dornberger, J. Electrochem. Soc., 145, 302 (1998).
13. R. Habu and A. Tomiura, Jpn. J. Appl. Phys., Part 1, 35, 1 (1996).
14. W. Wijaranakula, J. Electrochem. Soc., 140, 3306 (1993).
15. W. A. Tiller, M. Friedman, R. Shaw, N. Cuendet, and T. Halicioglu, J. Cryst. Growth, 186, 113 (1998).
16. K. Nakamura, T. Saishoji, and J. Tomioka, in Semiconductor Silicon 2002, H. R. Huff, L. Fabry, and S. Kishino, Editors, PV 2002-2, p. 554, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
17. V. V. Voronkov and R. Falster, J. Appl. Phys., 86, 5975 (1999).
18. R. Falster, V. V. Voronkov, and F. Quast, Phys. Status Solidi B, 222, 219 (2000).
19. V. V. Voronkov and R. Falster, J. Appl. Phys., 89, 5965 (2001).
20. Z. Wang, T. Sinno, and R. A. Brown, Appl. Phys. Lett., 78, 180 (2001).
21. T. Sinno, E. Dornberger, R. A. Brown, W. von Ammon, and F. Dupret, Mater. Sci. Eng., R., 28, 149 (2000).
22. W. H. Press, S. A. Teukolsky, W. T. Vetterling, and B. P. Flannery, Numerical Recipes in Fortran, Cambridge University Press, Cambridge (1992).
23. E. Dornberger, W. von Ammon, J. Virbulis, B. Hanna, and T. Sinno, J. Cryst. Growth, 230, 291 (2001).
24. M. Tang, L. Colombo, J. Zhu, and T. Diaz de la Rubia, Phys. Rev. B, 55, 14279 (1997).
25. V. V. Voronkov and R. Falster, J. Cryst. Growth, 204, 462 (1999).
26. W. von Ammon, E. Dornberger, H. Oelkrug, and H. Widener, J. Cryst. Growth, 151, 273 (1995).
27. A. Seidl, G. Muller, E. Dornberger, E. Tomzig, B. Rexer, and W. von Ammon, in Semiconductor Silicon 1998, H. R. Huff, U. Gösele, and H. Tsoya, Editors, Silicon Materials Science and Technology, PV 98-1, Vol. 1, p. 415, The Electrochemical Society Proceedings Series, Pennington, NJ (1998).
28. E. Dornberger, E. Tomzig, A. Seidl, S. Schmitt, H.-J. Leister, C. Schmitt, and G. Mueller, J. Cryst. Growth, 180, 461 (1997).
29. F. Dupret, P. Nicodeme, Y. Ryckmans, P. Wouters, and M. Crochet, Int. J. Heat Mass Transfer, 33, 1849 (1990).
30. H. Bracht, N. A. Stoljik, I. Yonenaga, and H. Mehrer, Phys. Status Solidi A, 137, 499 (1993).
31. R. A. Brown, D. Maroudas, and T. Sinno, J. Cryst. Growth, 137, 12 (1994).
32. H. D. Ceniceros and T. Y. Hou, J. Comput. Phys., 172, 609 (2001).
33. G. Beckett, J. A. Mackenzie, and M. L. Robertson, J. Comput. Phys., 168, 500 (2001).
34. J. A. Nelder and R. Mead, Comput. J., 7, 308 (1965).
35. L. Ingber, Math. Comput. Modell., 15, 77 (1991).
36. H. Bracht, in Defects in Silicon III, T. Abe, W. M. Bullis, S. Kobayashi, W. Lin, and P. Wagner, Editors, PV 99-1, p. 357, The Electrochemical Society Proceedings Series, Pennington, NJ (1999).
37. F. H. Stillinger and T. A. Weber, Phys. Rev. B, 31, 5262 (1985).
38. M. Z. Bazant, E. Kaxiras, and J. F. Justo, Phys. Rev. B, 56, 8542 (1997).