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Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 641-645

Modeling of point defect formation in silicon monocrystals

(2) Zabelin, V A a Kalaev, V V a

a SOFT IMPACT LTD (Russian Federation)

Author keywords

Defect nucleation; Oxygen precipitate; Point defect; Silicon

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; HEAT TRANSFER; MASS TRANSFER; NUCLEATION; POINT DEFECTS; PRECIPITATION (CHEMICAL); REACTION KINETICS; SEMICONDUCTOR GROWTH;

DEFECT NUCLEATION;

SEMICONDUCTING SILICON;

EID: 0141857950 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(03)00357-5 Document Type: Conference Paper

Times cited : (8)

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