Drastic improvements of gate oxide reliability by argon annealing compared with hydrogen annealing

Journal of the Electrochemical Society

Volumn 145, Issue 10, 1998, Pages 3628-3631

  Yamada, Naoki ^a   Yamada Kaneta, Hiroshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DIFFUSION; GATES (TRANSISTOR); OXYGEN; RELIABILITY; SILICON WAFERS; SURFACE ROUGHNESS;

ARGON ANNEALING; GATE OXIDE; HYDROGEN ANNEALING; SURFACE DEFECTS;

OXIDES;

EID: 0032187416     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838854     Document Type: Article

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