Effect of vacancy-type oxygen deficiency on electronic structure in amorphous alumina

Applied Physics Letters

Volumn 98, Issue 4, 2011, Pages

  Momida, Hiroyoshi ^a   Nigo, Seisuke ^b   Kido, Giyuu ^b   Ohno, Takahisa ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALUMINA; ATOMIC STRUCTURE; ATOMISTIC MECHANISM; CHARGE STATE; CONDUCTIVE PATHS; ENERGY LEVEL; FIRST-PRINCIPLES CALCULATION; LOCAL ATOMIC STRUCTURES; MEMORY DEVICE; OXYGEN DEFECT; OXYGEN DEFICIENCY; RESISTIVE SWITCHING;

CRYSTAL ATOMIC STRUCTURE; DEFECTS; ELECTRONIC STRUCTURE; OXYGEN; SWITCHING SYSTEMS;

OXYGEN VACANCIES;

EID: 79551648530     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3548549     Document Type: Article

References (22)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 89, 5243 (2001). 10.1063/1.1361065
2. J. A. Kittl, K. Opsomer, M. Popovici, N. Menou, B. Kaczer, X. P. Wang, C. Adelmann, M. A. Pawlak, K. Tomida, A. Rothschild, B. Govoreanu, R. Degraeve, M. Schaekers, M. Zahid, A. Delabie, J. Meersschaut, W. Polspoel, S. Clima, G. Pourtois, W. Knaepen, C. Detavernier, V. V. Afanas'ev, T. Blomberg, D. Pierreux, J. Swerts, P. Fischer, J. W. Maes, D. Manger, W. Vandervorst, T. Conard, A. Franquet, P. Favia, H. Bender, B. Brijs, S. Van Elshocht, M. Jurczak, J. Van Houdt, and D. J. Wouters, Microelectron. Eng. 0167-9317 86, 1789 (2009). 10.1016/j.mee.2009.03.045
3. S. Kato, S. Nigo, J. W. Lee, M. Mihalik, H. Kitazawa, and G. Kido, J. Phys.: Conf. Ser. 1742-6588 109, 012017 (2008). 10.1088/1742-6596/109/1/012017
4. J. Lee, S. Nigo, Y. Nakano, S. Kato, H. Kitazawa, and G. Kido, Sci. Technol. Adv. Mater. 1468-6996 11, 025002 (2010). 10.1088/1468-6996/11/2/025002
5. S. Kim and Y. -K. Choi, Appl. Phys. Lett. 0003-6951 92, 223508 (2008). 10.1063/1.2939555
6. W. Zhu, T. P. Chen, Z. Liu, M. Yang, Y. Liu, and S. Fung, J. Appl. Phys. 0021-8979 106, 093706 (2009). 10.1063/1.3253722
7. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. 0034-4885 33, 1129 (1970). 10.1088/0034-4885/33/3/306
8. M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, and N. Awaya, Appl. Phys. Lett. 0003-6951 89, 223509 (2006). 10.1063/1.2397006 (Pubitemid 44847628)
9. R. Waser and M. Aono, Nature Mater. 1476-1122 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
10. A. Sawa, Mater. Today 1369-7021 11, 28 (2008). 10.1016/S1369-7021(08) 70119-6 (Pubitemid 351680723)
11. H. Momida, T. Hamada, Y. Takagi, T. Yamamoto, T. Uda, and T. Ohno, Phys. Rev. B 0556-2805 73, 054108 (2006) 10.1103/PhysRevB.73.054108 (Pubitemid 43292573)
12. H. Momida, T. Hamada, Y. Takagi, T. Yamamoto, T. Uda, and T. Ohno, Phys. Rev. B 0556-2805 75, 195105 (2007), and references therein. 10.1103/PhysRevB.75. 195105
13. T. Iijima, S. Kato, R. Ikeda, S. Ohki, G. Kido, M. Tansho, and T. Shimizu, Chem. Lett. 0366-7022 34, 1286 (2005). 10.1246/cl.2005.1286 (Pubitemid 41737913)
14. S. K. Lee, S. B. Lee, S. Y. Park, Y. S. Yi, and C. W. Ahn, Phys. Rev. Lett. 0031-9007 103, 095501 (2009). 10.1103/PhysRevLett.103.095501
15. P. Hohenberg and W. Kohn, Phys. Rev. 0031-899X 136, B864 (1964). 10.1103/PhysRev.136.B864
16. W. Kohn and L. J. Sham, Phys. Rev. 0031-899X 140, A1133 (1965). 10.1103/PhysRev.140.A1133
17. J. P. Perdew and Y. Wang, Phys. Rev. B 0556-2805 45, 13244 (1992). 10.1103/PhysRevB.45.13244
18. D. Vanderbilt, Phys. Rev. B 0556-2805 41, 7892 (1990). 10.1103/PhysRevB.41.7892
19. C. G. Van de Walle and J. Neugebauer, J. Appl. Phys. 0021-8979 95, 3851 (2004), and references therein. 10.1063/1.1682673
20. R. H. French, J. Am. Ceram. Soc. 0002-7820 73, 477 (1990). 10.1111/j.1151-2916.1990.tb06541.x
21. S. Miyazaki, J. Vac. Sci. Technol. B 1071-1023 19, 2212 (2001). 10.1116/1.1418405 (Pubitemid 34089722)
22. P. Broqvist and A. Pasquarello, Microelectron. Eng. 0167-9317 84, 2022 (2007). 10.1016/j.mee.2007.04.075 (Pubitemid 46783938)