Structural analysis of anodic porous alumina used for resistive random access memory

Science and Technology of Advanced Materials

Volumn 11, Issue 2, 2010, Pages

  Lee, Jeungwoo ^a   Nigo, Seisuke ^a   Nakano, Yoshihiro ^b   Kato, Seiichi ^a   Kitazawa, Hideaki ^a   Kido, Giyuu ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Engineous Japan Inc   (Japan)

Author keywords

Nanostructure; Porous alumina; ReRAM

Indexed keywords

ANODIC POROUS ALUMINA; CONDUCTION PATHS; INNER LAYER; NANOSTRUCTURAL ANALYSIS; OUTER LAYER; POROUS ALUMINA; RESISTIVE RANDOM ACCESS MEMORY; SWITCHING EFFECT; TWO LAYERS;

ALUMINA; DISSOCIATION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; HOLOGRAPHIC INTERFEROMETRY; NANOSTRUCTURES; OXYGEN; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY; STRUCTURAL ANALYSIS; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 77951612644     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1088/1468-6996/11/2/025002     Document Type: Article

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