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Volumn 49, Issue 11, 2010, Pages

Magnetoresistance of a spin metal-oxide-semiconductor field-effect transistor with ferromagnetic MnAs source and drain contacts

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL MNAS FILMS; GATE BIAS; HYSTERETIC BEHAVIOR; IN-PLANE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; RESISTANCE CHANGE; SILICON-ON-INSULATOR SUBSTRATES; SOURCE AND DRAINS; SOURCE-DRAIN; SPIN DEPENDENT TRANSPORT; SPIN VALVE EFFECT; TRANSPORT CHARACTERISTICS;

EID: 79551639459     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.113001     Document Type: Article
Times cited : (31)

References (25)
  • 2
    • 79551649630 scopus 로고    scopus 로고
    • The International Technology Roadmap for Semiconductors [http://public.itrs.net/].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.