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Volumn 49, Issue 11, 2010, Pages
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Magnetoresistance of a spin metal-oxide-semiconductor field-effect transistor with ferromagnetic MnAs source and drain contacts
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Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL MNAS FILMS;
GATE BIAS;
HYSTERETIC BEHAVIOR;
IN-PLANE;
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR;
MOS-FET;
RESISTANCE CHANGE;
SILICON-ON-INSULATOR SUBSTRATES;
SOURCE AND DRAINS;
SOURCE-DRAIN;
SPIN DEPENDENT TRANSPORT;
SPIN VALVE EFFECT;
TRANSPORT CHARACTERISTICS;
DIELECTRIC DEVICES;
ELECTRIC RESISTANCE;
FERROMAGNETIC MATERIALS;
FERROMAGNETISM;
FIELD EFFECT TRANSISTORS;
HYSTERESIS;
MAGNETIC FIELD EFFECTS;
MAGNETOELECTRONICS;
MAGNETORESISTANCE;
MANGANESE COMPOUNDS;
MOSFET DEVICES;
PHOTOLITHOGRAPHY;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 79551639459
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.49.113001 Document Type: Article |
Times cited : (31)
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References (25)
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