Magnetoresistance of a spin metal-oxide-semiconductor field-effect transistor with ferromagnetic MnAs source and drain contacts

Japanese Journal of Applied Physics

Volumn 49, Issue 11, 2010, Pages

  Nakane, Ryosho ^a   Harada, Tomoyuki ^a   Sugiura, Kuniaki ^a   Tanaka, Masaaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL MNAS FILMS; GATE BIAS; HYSTERETIC BEHAVIOR; IN-PLANE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; RESISTANCE CHANGE; SILICON-ON-INSULATOR SUBSTRATES; SOURCE AND DRAINS; SOURCE-DRAIN; SPIN DEPENDENT TRANSPORT; SPIN VALVE EFFECT; TRANSPORT CHARACTERISTICS;

DIELECTRIC DEVICES; ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FIELD EFFECT TRANSISTORS; HYSTERESIS; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; MOSFET DEVICES; PHOTOLITHOGRAPHY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79551639459     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.113001     Document Type: Article

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