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Volumn 95, Issue 11 II, 2004, Pages 6558-6561

Effect of postgrowth annealing on the morphology and magnetic properties of MnAs thin films grown on GaAs(001) substrates

(3) Nakane, R a Sugahara, S a,b Tanaka, M a,b

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; COERCIVE FORCE; DEGREES OF FREEDOM (MECHANICS); EPITAXIAL GROWTH; HETEROJUNCTIONS; MAGNETIZATION; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTIMIZATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

ATOMIC FORCE MICROSCOPY (AFM); CRYSTALLINITY; CURIE TEMPERATURE; GROWTH CONDITIONS;

SEMICONDUCTING MANGANESE COMPOUNDS;

EID: 2942659762 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1688254 Document Type: Conference Paper

Times cited : (11)

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