Band engineering of rutile TiO2 by cobalt doping in Ru/rutile-TiO2/Ru capacitor aiming 40-nm DRAM and beyond

ECS Transactions

Volumn 19, Issue 2, 2009, Pages 739-750

  Tonomura, Osamu ^a   Sekiguchi, Tomoko ^a   Inada, Naomi ^a   Hamada, Tomoyuki ^a   Miki, Hiroshi ^b   Torii, Kazuyoshi ^a  

^a HITACHI LTD   (Japan)

^b HITACHI AMERICA LTD   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALANCING; COBALT; COBALT METALLOGRAPHY; ELECTRON TUNNELING; HIGH-K DIELECTRIC; LOW-K DIELECTRIC; NITRIDES; OXIDE MINERALS; RUTHENIUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SILICA; SILICON NITRIDE; TEMPERATURE DISTRIBUTION; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND STRUCTURE ANALYSIS; FABRICATION PROCESS; LOW-LEAKAGE CURRENT; RELATIVE PERMITTIVITY; SCHOTTKY BARRIERS; TEMPERATURE DEPENDENCE; THERMIONIC CURRENTS; TUNNELING CURRENT;

LEAKAGE CURRENTS;

EID: 74249089904     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3122129     Document Type: Conference Paper

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