Ballistic mobility degradation in scaled-down channel of a MOSFET

2009 International Semiconductor Device Research Symposium, ISDRS '09

Volumn , Issue , 2009, Pages

  Riyadi, Munawar ^a,b   Pollard, Christopher ^c   Arora, Vijay K ^a,c  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b DIPONEGORO UNIVERSITY   (Indonesia)

^c WILKES UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77949372676     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2009.5378299     Document Type: Conference Paper

References (10)

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2. Vijay K. Arora, "Theory of Scattering-Limited and Ballistic Mobility and Saturation Velocity in Low-Dimensional Nanostructures,"Current Nanoscience (CNANO) 5, 227(2009).
3. Perry J. Robertson and David J. Dumin, Ballistic Transport and P erties of Submicrometer Silicon M0SFET"s from 300 to 4.2 K," IEEE Transactions on Electron Devices ED-33, 494(1986).
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5. M. S. Shur, "Low ballistic mobility in submicron HEMT's," IEEE Electron Devices Letters 23, 511(2002).
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8. Michael L. P. Tan, Vijay K. Arora, Ismail Saad, Mohammad Taghi Ahmadi, and Razali Ismail, "The drain velocity overshoot in an 80-nm metal-oxide-semiconductor field-effect-transistor," Journal of Applied Physics 105, 074503 (2009).
9. F. Andrieu, F. Transistors CMOS Decananometriques a Canaux Contraints sur Silicium Massif ou sur SOI. Ph. D. thesis, INPG, France, 2005;
10. K. Hue, J. Saint-Martin, A. Bournel, S. Galdin-Retailleau, P. Dollfus, G. Ghibaudo, M. Mouis, "Monte Carlo study of apparent mobility reduction in nano-MOSFETs, Proceedings of Solid State Device Research Conference, 2007 (37th European ESSDERC 2007), 11-13 Sept. 2007, Page(s):382 - 385 . Digital Object Identifier 10.1109/ESSDERC.2007.4430958 (Available in IEEE Xplore).