High-field initiated ballistic transport in carbon nanotubes

2009 International Semiconductor Device Research Symposium, ISDRS '09

Volumn , Issue , 2009, Pages

  Tan, Michael L P ^a,b   Vidhi, Rachana ^c   Saxena, Tanuj ^d   Chek, Desmond C Y ^b   Arora, Vijay K ^b,e  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^c INDIAN INSTITUTE OF TECHNOLOGY   (India)

^d INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^e WILKES UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77949391044     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2009.5378178     Document Type: Conference Paper

References (5)

1. Vijay K. Arora, "Theory of scattering-limited and ballistic mobility and saturation velocity in low-dimensional nanostructures," Current Nanoscience (CNANO), vol. 5, pp. 227-231, 2009.
2. A. Srivastava, J. M. Marulanda, Y. Xu, and A. K. Sharma, "Current transport modeling of carbon nanotube field effect transistors," Physica Status Solidi (a), vol. 206, pp. 1569-1578, 2009.
3. M. S. Shur, "Low ballistic mobility in submicron HEMTs," IEEE Elect. Dev. Lett., vol. 23, pp. 511-513, 2002.
4. I. Meric, M. Y. Han, A. F. Young, B. Oezyilmaz, P. Kim, and K. Shepard, "Current saturation in zero-bandgap, top gated graphene field-effect transistors," Nat. Nanotechnol., vol. 3, pp. 654-659, 2008.
5. Michael L. P. Tan, Vijay K. Arora, Ismail Saad, Mohammad Taghi Ahmadi, and Razali Ismail, "The drain velocity overshoot in an 80 nm Metal-Oxide-Semiconductor Field-Effect Transistor," J. Appl. Phys., vol. 105, p. 074503, 2009.