The impact of the breakdown of Ohm's law on switching delay due to reactive elements connected in series with a micro/nano-resistor

2009 International Semiconductor Device Research Symposium, ISDRS '09

Volumn , Issue , 2009, Pages

  Arora, Vijay K ^a,b   Bin Hashim, Abdul Manaf ^b   Chek, Desmond ^b   Saxena, Tanuj ^c  

^a WILKES UNIVERSITY   (United States)

^b UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^c INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77949350485     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2009.5378044     Document Type: Conference Paper

References (4)

1. David R. Greenberg and Jesus A. del Alamo, "D. R. Greenberg and J. A. del Alamo, "Velocity Saturation in the Extrinsic Device: A fundamental Limit in HFET's. IEEE Transactions on Electron Devices. 41, 1334-1339(1994).
2. Vijay K. Arora, "High-field electron mobility and temperature in bulk semiconductors," Phys. Rev. B 30, 7297 (1984).
3. Vijay K. Arora, "Theory of scattering-limited and ballistic mobility and saturation velocity in low-dimensional nanostructures," Current Nanoscience (CNANO) 5, pp.227-231(2009).
4. Michael L. P. Tan, Ismail Saad, Razali Ismail, and Vijay K. Arora, "Enhancement in nano-RC switching delay due to current saturation," NANO, Volume 2, No. 4, pp. 233-237 (2007).