Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

  Dudek, P ^a   Lupina, G ^a   Kozowski, G ^a   Zaumseil, P ^a   Bauer, J ^a   Fursenko, O ^a   Dabrowski, J ^a   Schmidt, R ^a   Lippert, G ^a   Mussig H J ^a   Schroeder, T ^a   Schmeisser D ^b   Zschech, E ^b  

^a IHP   (Germany)

^b FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINARY ALLOYS; HAFNIUM; HIGH-K DIELECTRIC; PHOTOELECTRON SPECTROSCOPY; PLATINUM ALLOYS; RAPID THERMAL ANNEALING; TITANIUM;

ATOMIC SCALE ENGINEERING; CAPACITANCE-EQUIVALENT THICKNESS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION TEMPERATURE; DYNAMIC RANDOM ACCESS MEMORY; HIGH WORK FUNCTION; HIGH- K; HOMOGENEOUS FILMS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 79551615967     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3521487     Document Type: Conference Paper

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