Group-II hafnate and zirconate high-k dielectrics for MIM storage capacitors in DRAM: The defect issue

ECS Transactions

Volumn 25, Issue 6, 2009, Pages 219-239

  Dabrowski, J ^a   Dudek, P ^a   Kozlowski G ^a   Lupina G ^a   Lippert, G ^a   Schmidt, R ^a   Walczyk, Ch ^a   Wenger, Ch ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM ZIRCONATE; CALCULATIONS; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRONIC STRUCTURE; GATE DIELECTRICS; GRAIN BOUNDARIES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MIM DEVICES; SOLVENTS; STRONTIUM COMPOUNDS; TITANIUM; TITANIUM NITRIDE;

AB INITIO CALCULATIONS; DEFECTS IN METALS; ELECTRICAL MEASUREMENT; FORMATION ENERGIES; PREPARATION PROCESS; STORAGE CAPACITOR; TRANSITION METAL SITE; TUNNELING BARRIER;

HIGH-K DIELECTRIC;

EID: 76549087354     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3206622     Document Type: Conference Paper

References (40)

1. The International Roadmap for Semiconductors, Semiconductor Industry Association, Palo Alto, 2007 update.
2. G. łupina, P. Dudek, G. Kozłowski, J. Da̧browski, G. Lippert, H.-J. Müssig, and T. Schroeder, this issue.
3. M. Bockstedte, A. Kley, J. Neugebauer, and M. Scheffler, Comp. Phys. Comm. 107, 187 (1997).
4. D.M Ceperley and B.J. Alder, Phys. Rev. Lett. 45, 567 (1980).
5. J. P. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).
6. D. R. Haman, Phys. Rev. B 40, 2980 (1989).
7. G. B. Bachelet, D. R. Hamann, and M. A. Schlüter, Phys. Rev. B 26, 4199 (1982).
8. M. Cococcioni, A LDA + U study of selected iron compounds, PhD thesis, International School for Advanced Studies (SISSA), The Condensed Matter Theory Sector (2002).
9. M. C. Gibson, Implementation and Application of Advanced Density Functionals, PhD thesis, Department of Physics, University of Durham (2006).
10. B. Brar, G. D. Wilk, and A. C. Seabaugh, Appl. Phys. Lett. 69, 2728 (1996).
11. J. G. Simmons, J. Appl. Phys. 34, 1793, (1963).
12. "Process Integration, Devices, and Structures", The International Roadmap for Semiconductors, pp. 31-32, Semiconductor Industry Association, Palo Alto, 2007.
13. F. Jiménez-Molinos, A. Palma, F. Gámiz, J. Banqueri, and J.A. López-Villanueva, J. Appl. Phys. 90, 3396 (2001).
14. J. Da̧browski, G. Lippert, L. Oberbeck, U. Schröder, I. Costina, G. Lupina, M. Ratzke, P. Zaumseil, and H.-J. Müssig, J. Electrochem. Soc. 155, G97 (2008).
15. J. Da̧browski, S. Miyazaki, S. Inumiya, G. Kozłowski, G. Lippert, G. łupina, Y. Nara, H.-J. Müssig, A. Ohta, and Y. Pei, in Advances in Electronic Materials, E. Kasper, H.-J. Müssig, and H. G. Grimmeiss, Editors, p. 55, Trans Tech Publications, Zurich (2009).
16. One should stress here that the accuracy of this estimate relies on accuracy of the assumed effective mass of the tunneling charge.
17. nd edition, p. 403, Willey (1891).
18. A. Fissel, J. Da̧browski, and H. J. Osten., J. Appl. Phys. 91, 8986 (2002).
19. H. J. Osten, J. Da̧browski, H.-J. Müssig, A. Fissel, and V. Zavodinsky, in Predictive Simulation of Semiconductor Processing, J. Da̧browski and E. R. Weber, Editors, p. 258, Springer (2004).
20. Y.-C. Yeo et al., IEEE EDL 23, 342 (2002).
21. Y.-C. Yeo et al., J. Appl. Phys. 92, 7266 (2002).
22. D. R Lamb, Electrical conduction mechanisms in thin insulating films, Methuen (1967).
23. C. Hamann, Th. Frauenheim, and H. Burghardt, Electrical Conduction Mechanisms in Solids, J. A. Barth, Leipzig (1988).
24. J. Frenkel, Phys. Rev. 54, 657 (1938).
25. J. R. Yeargan and H. L. Taylor, J. Appl. Phys. 39, 5600 (1968).
26. V. I. Kold'yaev, Phil. Mag. B 79, 331 (1999).
27. R. M. Hill, Phil. Mag. 23, 59 (1971).
28. R. Ongaro and A. Pillonett, Rev. Phys. Appl. 24, 1097 (1989).
29. R. Ongaro and A. Pillonnet, Rev. Phys. Appl. 24, 1085 (1989).
30. P. C. Arnett and N. Klein, J. Appl. Phys. 46, 1399 (1975).
31. H. C. Barshilia, B. Deepthi, A.S. Aran Prabhu, and K.S. Rajam, Surface and Coatings Technology 201, 329-337 (2006).
32. LDA contains some electrostatic self-interaction and the eigenvalue of single-electron state typically increases when this state becomes occupied with electron.
33. R. S. Bever and R. L. Sproull, Phys. Rev. B 83, 801 (1951).
34. R. Scholder, D. Räde, and H. Schwartz, Zeitschrift für anorganische und allgemeine Chemie, 362, 149 (1968).
35. T. H. Büyüklimanli and J. H. Simmons, Phys. Rev. B 44, 727 (1991).
36. O. Bierwagen, L. Geelhaar, X. Gay M. Piesins, and H. Riechert, Appl. Phys. Lett. 90, 232901 (2007).
37. A. S. Foster, V. B. Sulimov, F. Lopez Gejo, A. L. Shluger, and R. M. Nieminen, Phys. Rev. B 64, 224108 (2001).
38. G. łupina, G. Kozłowski, J. Da̧browski, Ch. Wenger, P. Dudek, P. Zaumseil, G. Lippert, Ch. Walczyk, and H.-J. Müssig, Appl. Phys. Lett. 92, 062906 (2008).
39. G. łupina, J. Da̧browski, P. Dudek, G. Kozłowski, P. Zaumseil, G. Lippert, O. Fursenko, J. Bauer, C. Baristran, I. Costina, H.-J. Müssig, L. Oberbeck, and U. Schröder, Appl. Phys. Lett. 94, 152903 (2009).
40. G. łupina, G. Kozłowski, J. Da̧browski, P. Dudek, G. Lippert, and H.-J. Müssig, Appl. Phys. Lett. 93, 252907 (2008).