Epitaxial growth and resistive switching properties of BaTiO3 on (0 0 1) Si by RF sputtering

Journal of Physics D: Applied Physics

Volumn 41, Issue 24, 2008, Pages

  Wang, Chun ^a   Kryder, Mark H ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL RELATIONSHIPS; HETEROSTRUCTURES; HIGH-RESISTANCE STATE; INPUT VOLTAGES; LOW-RESISTANCE STATE; ORIENTATION RELATIONSHIP; RESISTIVE SWITCHING; RF-SPUTTERING; SI(0 0 1); SINGLE CRYSTAL SUBSTRATES; SMOOTH SURFACE; TEMPLATE LAYERS;

BARIUM COMPOUNDS; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HOLOGRAPHIC INTERFEROMETRY; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON WAFERS; SINGLE CRYSTALS; SWITCHING SYSTEMS; TITANIUM NITRIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77951246068     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/24/245301     Document Type: Article

References (13)

1. Kingon A I, Maria J-P and Streiffer S K 2000 Nature 406 1032
2. Kim Y S et al 2005 Appl. Phys. Lett. 86 102907
3. Cho Y W, Choi S K and Rao G V 2005 Appl. Phys. Lett. 86 202905
4. Beck A, Bednorz J G, Gerber Ch, Rossel C and Widmer D 2000 Appl. Phys. Lett. 77 139
5. Singh M P, Mechin L, Prellier W and Maglione M 2006 Appl. Phys. Lett. 89 202906
6. Narayan J, Tiwari P, Chen X, Singh J, Chowdhury R and Zheleva T 1992 Appl. Phys. Lett. 61 1290
7. Zheleva T, Jagannadham K and Narayan J 1994 J. Appl. Phys. 75 860
8. Sheu W H and Wu S T 1998 Japan. J. Appl. Phys. 37 3446
9. Watanabe Y, Bednorz J G, Bietsch A, Gerber Ch, Widmer D, Beck A and Wind S J 2001 Appl. Phys. Lett. 78 3738
10. Rodriguez Contreras J et al 2003 Appl. Phys. Lett. 83 4595
11. Wang C and Kryder M H 2008 J. Appl. Phys. 103 064106
12. Shono K, Kawano H, Yokota T and Gomi M 2008 Appl. Phys. Express 1 055002
13. Fujimoto M, Koyama H, Konagai M, Hosoi Y, Ishihara K, Ohnishi S and Awaya N 2006 Appl. Phys. Lett. 89 223509