-
2
-
-
50249088094
-
-
L. Heineck, W. Graf, M. Popp, D. Savignac, R. Tews, D. Temmler, G. Kar, M. Goldbach, E. Landgraf, M. Drubba, S. Lukas, D. Weinemann, W. Roesner, and W. Mueller, Tech. Dig.-Int. Electron Devices Meet. 2007, 31.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2007
, pp. 31
-
-
Heineck, L.1
Graf, W.2
Popp, M.3
Savignac, D.4
Tews, R.5
Temmler, D.6
Kar, G.7
Goldbach, M.8
Landgraf, E.9
Drubba, M.10
Lukas, S.11
Weinemann, D.12
Roesner, W.13
Mueller, W.14
-
3
-
-
65249083348
-
-
ITRS.
-
ITRS, 2007, http://public.itrs.net.
-
(2007)
-
-
-
4
-
-
84950309605
-
-
in, edited by M. Baklanov, M. Green, and K. Maex (Wiley, New York).
-
A. Toriumi and K. Kita, in Dielectric Films for Advanced Microelectronics, edited by, M. Baklanov, M. Green, and, K. Maex, (Wiley, New York, 2007).
-
(2007)
Dielectric Films for Advanced Microelectronics
-
-
Toriumi, A.1
Kita, K.2
-
6
-
-
44849144583
-
-
0003-6951 10.1063/1.2939102.
-
S. W. Lee, O. S. Kwon, J. H. Han, and C. S. Hwang, Appl. Phys. Lett. 0003-6951 10.1063/1.2939102 92, 222903 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 222903
-
-
Lee, S.W.1
Kwon, O.S.2
Han, J.H.3
Hwang, C.S.4
-
7
-
-
39349112515
-
-
0003-6951 10.1063/1.2842426.
-
G. Lupina, G. Kozlowski, J. Dabrowski, Ch. Wenger, P. Dudek, P. Zaumseil, G. Lippert, Ch. Walczyk, and H. -J. Müssig, Appl. Phys. Lett. 0003-6951 10.1063/1.2842426 92, 062906 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 062906
-
-
Lupina, G.1
Kozlowski, G.2
Dabrowski, J.3
Wenger, Ch.4
Dudek, P.5
Zaumseil, P.6
Lippert, G.7
Walczyk, Ch.8
Müssig, H.-J.9
-
8
-
-
0028375118
-
-
0022-2461 10.1007/BF00445994.
-
J. L. Zhang and J. E. Evetts, J. Mater. Sci. 0022-2461 10.1007/BF00445994 29, 778 (1994).
-
(1994)
J. Mater. Sci.
, vol.29
, pp. 778
-
-
Zhang, J.L.1
Evetts, J.E.2
-
9
-
-
29744455567
-
-
0163-1829 10.1103/PhysRevB.72.205104.
-
A. R. Akbarzadeh, I. Kornev, C. Malibert, L. Bellaiche, and J. M. Kiat, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.205104 72, 205104 (2005).
-
(2005)
Phys. Rev. B
, vol.72
, pp. 205104
-
-
Akbarzadeh, A.R.1
Kornev, I.2
Malibert, C.3
Bellaiche, L.4
Kiat, J.M.5
-
11
-
-
9144258943
-
-
0021-8979 10.1063/1.1702682.
-
J. G. Simmons, J. Appl. Phys. 0021-8979 10.1063/1.1702682 34, 1793 (1963).
-
(1963)
J. Appl. Phys.
, vol.34
, pp. 1793
-
-
Simmons, J.G.1
-
12
-
-
65249177749
-
-
The tunneling is most efficient for defects located at such a distance from the electrode 1 that the squared tunneling distance times the average tunneling barrier s2 - is equal for tunneling stefrom electrode 1 to the defect and for the tunneling stefrom the defect to the electrode 2.
-
The tunneling is most efficient for defects located at such a distance from the electrode 1 that the squared tunneling distance times the average tunneling barrier s2 - is equal for tunneling step from electrode 1 to the defect and for the tunneling step from the defect to the electrode 2.
-
-
-
-
13
-
-
0034187380
-
-
1071-1023 10.1116/1.591472.
-
J. Robertson, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.591472 18, 1785 (2000).
-
(2000)
J. Vac. Sci. Technol. B
, vol.18
, pp. 1785
-
-
Robertson, J.1
-
14
-
-
65249150177
-
-
J. Dbrowski, S. Mizayaki, S. Inumiya, G. Kozlowski, G. Lippert, G. upina, Y. Nara, H. -J. Müssig, A. Ohta, and Y. Pei, Mater. Sci. Forum 608, 55 (2009).
-
(2009)
Mater. Sci. Forum
, vol.608
, pp. 55
-
-
Dbrowski, J.1
Mizayaki, S.2
Inumiya, S.3
Kozlowski, G.4
Lippert, G.5
Upina, G.6
Nara, Y.7
Müssig, H.-J.8
Ohta, A.9
Pei, Y.10
-
15
-
-
58149161402
-
-
0003-6951 10.1063/1.3049611.
-
G. upina, G. Kozowski, J. Dbrowski, P. Dudek, G. Lippert, and H. -J. Müssig, Appl. Phys. Lett. 0003-6951 10.1063/1.3049611 93, 252907 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 252907
-
-
Upina, G.1
Kozowski, G.2
Dbrowski, J.3
Dudek, P.4
Lippert, G.5
Müssig, H.-J.6
|