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Volumn 94, Issue 15, 2009, Pages

Dielectric constant and leakage of BaZrO> films

Author keywords

[No Author keywords available]

Indexed keywords

AB-INITIO CALCULATIONS; AMORPHOUS LAYERS; CONDUCTIVE ATOMIC FORCE MICROSCOPIES; DIELECTRIC CONSTANTS; HOT SPOTS; OPTICAL BAND-GAP; PEROVSKITE LAYERS; POLY-CRYSTALLINE; POLYCRYSTALLINE FILMS; SECONDARY IONS;

EID: 65249187699     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3110970     Document Type: Article
Times cited : (29)

References (15)
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    • ITRS, 2007, http://public.itrs.net.
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    • 0028375118 scopus 로고
    • 0022-2461 10.1007/BF00445994.
    • J. L. Zhang and J. E. Evetts, J. Mater. Sci. 0022-2461 10.1007/BF00445994 29, 778 (1994).
    • (1994) J. Mater. Sci. , vol.29 , pp. 778
    • Zhang, J.L.1    Evetts, J.E.2
  • 11
    • 9144258943 scopus 로고
    • 0021-8979 10.1063/1.1702682.
    • J. G. Simmons, J. Appl. Phys. 0021-8979 10.1063/1.1702682 34, 1793 (1963).
    • (1963) J. Appl. Phys. , vol.34 , pp. 1793
    • Simmons, J.G.1
  • 12
    • 65249177749 scopus 로고    scopus 로고
    • The tunneling is most efficient for defects located at such a distance from the electrode 1 that the squared tunneling distance times the average tunneling barrier s2 - is equal for tunneling stefrom electrode 1 to the defect and for the tunneling stefrom the defect to the electrode 2.
    • The tunneling is most efficient for defects located at such a distance from the electrode 1 that the squared tunneling distance times the average tunneling barrier s2 - is equal for tunneling step from electrode 1 to the defect and for the tunneling step from the defect to the electrode 2.
  • 13


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.