Modeling of alternative high-κ dielectrics for memory based applications

ECS Transactions

Volumn 25, Issue 6, 2009, Pages 131-145

  Pourtois, G ^a   Clima, S ^a   Sankaran, K ^a,b   Delugas, P ^c   Fiorentini, V ^d   Magnus, W ^a,e   Soree B ^a   Van Elshocht, S ^a   Adelman, C ^a   Van Houdt, J ^a   Wouters, D ^a   De Gendt, S ^a,f   Heyns, M M ^a,f   Kittl, J A ^a  

^a IMEC   (Belgium)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^c CNR   (Italy)

^d UNIVERSITY OF CAGLIARI   (Italy)

^e UNIVERSITY OF ANTWERP   (Belgium)

^f UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; ENERGY GAP; FLASH MEMORY; GATE DIELECTRICS; HIGH-K DIELECTRIC; METAL INSULATOR BOUNDARIES; RARE EARTHS;

CRYSTALLIZATION TEMPERATURE; HIGH DIELECTRIC CONSTANTS; INTRINSIC PROPERTY; MATERIAL CANDIDATE; METAL INSULATOR METALS; NON-VOLATILE-MEMORY APPLICATIONS; POLARIZABILITIES; RESEARCH EFFORTS;

DIELECTRIC MATERIALS;

EID: 76549089875     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3206613     Document Type: Conference Paper

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