Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2101-2104

  Liu, Y X ^a   Matsukawa, T ^a   Endo, K ^a   Masahrara, M ^a   O'uchi, S ^a   Yamauchi, H ^a   Ishii, K ^a   Tsukada, J ^a   Ishikawa, Y ^a   Sakamoto, K ^a   Suzuki, E ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Current matching; Fin height control; FinFET; Mobility; Orientation dependent wet etching; TiN gate

Indexed keywords

CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DEVICE MANUFACTURE; TITANIUM NITRIDE; WET ETCHING;

CURRENT MATCHING; FIN-HEIGHT; FINFET CMOS TECHNOLOGY; ORIENTATION DEPENDENT WET ETCHING;

CMOS INTEGRATED CIRCUITS;

EID: 34248643162     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.080     Document Type: Article

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