An approach to modeling of silicon oxidationin a wet ultra-diluted ambient

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 432-435

  Kovalgin, Alexey ^a   Hof, Andre ^a   Schmitz, Jurriaan ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Model; Oxide; Silicon; Tunneling

Indexed keywords

DISSOCIATION; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; MATHEMATICAL MODELS; REACTION KINETICS; SILICON;

DEAL GROVE MODEL; IONIC TRANSPORT; OXIDE THICKNESS; SILICON OXIDATION;

OXIDATION;

EID: 19944393904     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.101     Document Type: Conference Paper

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