High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P 2S5/(NH4)2SX + UV interface treatment

Microelectronics Reliability

Volumn 51, Issue 2, 2011, Pages 381-385

  Lin, Chao Wei ^a   Chiu, Hsien Chin ^a   Lin, Che Kai ^a   Fu, Jeffrey S ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; CHEMICAL PRE-TREATMENT; GATE INSULATOR; GATE-LEAKAGE CURRENT; HIGH DIELECTRIC CONSTANTS; LOW FLICKER NOISE; LOW-NOISE APPLICATIONS; METAL-OXIDE-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR; MOSFETS; NOVEL PROCESS; PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; PLASMA-INDUCED DAMAGE; PRASEODYMIUM OXIDES; PRE-TREATMENT; SCHOTTKY LAYERS; SURFACE OXYGEN; SURFACE STATE; ULTRAVIOLET ILLUMINATION; UV ILLUMINATIONS;

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; OXYGEN; PASSIVATION; PLASMA DEPOSITION; PRASEODYMIUM; SULFUR; SURFACE ROUGHNESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79551491905     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.08.009     Document Type: Conference Paper

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