Surface passivation using P2S5/(NH4)2Sx and hydrogen fluoride solutions on Ag/n-InAs and Ag/n-InSb Schottky diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 562-564

  Jeng, Ming Jer ^a   Wang, Hung Tsung ^b   Chang, Liann Be ^b   Lin, Ray Ming ^c  

^a ST JOHN'S UNIVERSITY   (Taiwan)

^b NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Hydrogen fluoride; InAs and InSb diodes; Phosphorus sulphide ammonia sulphide; Schottky barrier height; Surface passivation

Indexed keywords

AMMONIUM COMPOUNDS; CARRIER CONCENTRATION; CLEANING; HYDROGEN INORGANIC COMPOUNDS; OHMIC CONTACTS; PASSIVATION; PHOSPHORUS COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; SURFACE CHEMISTRY;

AMMONIA SULPHIDE; BAKING TREATMENT; HYDROGEN FLUORIDE SOLUTION; INDIUM ANTIMONIDE; INDIUM ARSENIDE; PHOSPHORUS SULPHIDE; SURFACE PASSIVATION;

SCHOTTKY BARRIER DIODES;

EID: 0035246306     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.562     Document Type: Article

References (10)