Probing buried interfaces on Ge-based metal gate/high-k stacks by hard X-ray photoelectron spectroscopy

Applied Surface Science

Volumn 257, Issue 7, 2011, Pages 3007-3013

  Rubio Zuazo, J ^a,b   Martinez, E ^c   Batude, P ^c   Clavelier, L ^c   Chabli, A ^c   Castro, G R ^a,b  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^c CEA LETI   (France)

Author keywords

CMOS devices; Ge based metal gate high k stacks; HAXPES

Indexed keywords

CHEMICAL ANALYSIS; CHEMICAL BONDS; CHEMICAL SHIFT; CMOS INTEGRATED CIRCUITS; CORE LEVELS; ELECTRONIC STRUCTURE; KINETIC ENERGY; KINETICS; PHOTOELECTRONS; PHOTONS; X RAYS;

CHEMICAL COMPONENT; CMOS DEVICES; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; HAX-PES; INTERFACIAL BONDING; METAL GATE; PHOTOELECTRON KINETIC ENERGY; X RAY REFLECTIVITY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79251600125     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.10.108     Document Type: Article

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