SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 257, Issue 7, 2011, Pages 3145-3151

Field emission and optical properties of Ga-doped ZnO nanowires synthesized via thermal evaporation

(5) Chang, Li Wei a Yeh, Jien Wei a Cheng, Chia Liang c Shieu, F S b Shih, Han C a,d

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

c NATIONAL DONG HWA UNIVERSITY (Taiwan)

d CHINESE CULTURE UNIVERSITY (Taiwan)

Author keywords

Field emission; Nanowires; Optical properties of low dimensional structures

Indexed keywords

CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON SPIN RESONANCE SPECTROSCOPY; ENAMELS; FIELD EMISSION; FIELD EMISSION MICROSCOPES; FILM GROWTH; GALLIUM; GALLIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; INTEGRATED OPTOELECTRONICS; NANOWIRES; OPTICAL PROPERTIES; OXYGEN VACANCIES; PARAMAGNETIC RESONANCE; SCANNING ELECTRON MICROSCOPY; THERMAL EVAPORATION; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

ELECTRON PARAMAGNETIC RESONANCES (EPR); FIELD EMISSION MEASUREMENTS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FIELD ENHANCEMENT FACTOR; NEAR BAND EDGE EMISSIONS; OPTICAL PROPERTIES OF LOW-DIMENSIONAL STRUCTURE; OPTOELECTRONIC NANODEVICES; PHOTOLUMINESCENCE SPECTRUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79251599613 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.11.145 Document Type: Article

Times cited : (44)

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