Photoluminescence and field emission properties of Sn-doped ZnO microrods

Applied Surface Science

Volumn 256, Issue 11, 2010, Pages 3361-3364

  Li, Lijun ^a   Yu, Ke ^a   Wang, Yang ^a   Zhu, Ziqiang ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

Crystal growth; Field emission; Semiconductors

Indexed keywords

CRYSTAL GROWTH; FIELD EMISSION; FIELD EMISSION CATHODES; II-VI SEMICONDUCTORS; MICROELECTRONICS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; THERMAL EVAPORATION; TIN COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE;

CATH-ODE MATERIALS; DOPING CONCENTRATION; ENERGY DISPERSIVE X-RAY; FIELD EMISSION MEASUREMENTS; FIELD EMISSION PROPERTY; GREEN EMISSION PEAKS; MICRO-ELECTRONIC DEVICES; THERMAL EVAPORATION METHOD;

FIELD EMISSION DISPLAYS;

EID: 77649190123     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.12.034     Document Type: Article

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