Formation of highly aligned ZnO tubes on sapphire (0001) substrates

Applied Physics Letters

Volumn 84, Issue 20, 2004, Pages 4098-4100

  Zhang, B P ^a,d   Binh, N T ^a   Wakatsuki, K ^a,d   Segawa, Y ^a,d   Yamada, Y ^b   Usami, N ^b   Kawasaki, M ^b   Koinuma, H ^c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; CRYSTAL GROWTH; ENERGY STORAGE; FIELD EMISSION CATHODES; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SOLAR CELLS; ULTRASONICS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

FIELD-EMISSION DEVICES; ORGANIC SOLUTION; ULTRASONIC BATHS;

NANOTUBES;

EID: 2942553498     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1753061     Document Type: Article

References (24)

1. C. Weisbuch, H. Benisty, and R. J. Houdré, J. Lumin. 85, 271 (2000).
2. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1970).
3. T. Bukowski and J. H. Simmons, Crit. Rev. Solid State Mater. Sci. 27, 119 (2002).
4. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
5. C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, and H. J. Lee, Appl. Phys. Lett. 81, 3648 (2002).
6. K. Keis, E. Magnusson, H. Lindström, S. E. Lindquist, and A. Hagfeldt, Sol. Energy Mater. Sol. Cells 73, 51 (2002).
7. Y. Hu, X. Zhou, Q. Han, Q. Cao, and Y. Huang, Mater. Sci. Eng., B 99, 41 (2003).
8. S. W. Kim, S. Fujita, and S. Fujita, Appl. Phys. Lett. 81, 5036 (2002).
9. J. J. Wu and S. C. Liu, Adv. Mater. (Weinheim, Ger.) 14, 215 (2002).
10. B. P. Zhang, N. T. Binh, Y. Segawa, K. Wakatsuki, and N. Usami, Appl. Phys. Lett. 83, 1635 (2003).
11. W. I. Park, Y. H. Jun, S. W. Jung, and O. Yi, Appl. Phys. Lett. 82, 964 (2003).
12. S. Muthukumar, H. Sheng, J. Zhong, Z. Zhang, N. W. Emanetoglu, and Y. Lu, IEEE Trans. Nanotech. 2, 50 (2003).
13. Y. C. Kong, D. P. Yu, B. Zhang, W. Fang, and S. Q. Feng, Appl. Phys. Lett. 78, 407 (2001).
14. Z. W. Pan, Z. R. Dai, and Z. L. Wang, Science 291, 1947 (2001).
15. J. Y. Lao, J. Y. Huang, D. Z. Wang, and Z. F. Ren, Nano Lett. 3, 235 (2003).
16. H. T. Ng, J. Li, M. K. Smith, P. Nguyen, A. Cassell, J. Han, and M. Meyyappan, Science 300, 1249 (2003).
17. J. J. Wu, S. C. Liu, C. T. Wu, K. H. Chen, and L. C. Chen, Appl. Phys. Lett. 81, 1312 (2001).
18. J. Hu, Y. Bando, and Z. Liu, Adv. Mater. (Weinheim, Ger.) 15, 1000 (2003).
19. R. M. Wang, Y. J. Xing, J. Xu, and D. P. Yu, New J. Phys. 5, 115 (2003).
20. X. W. Sun, S. F. Yu, C. X. Xu, C. Yuen, B. J. Chen, and S. Li, Jpn. J. Appl. Phys., Part 2 42, L1229 (2003).
21. J. Q. Hu and Y. Bando, Appl. Phys. Lett. 82, 1401 (2003).
22. J. Zhang, L. Sun, C. Liao, and C. Yan, Chem. Commun. (Cambridge) 2002, 262 (2002).
23. B. P. Zhang, K. Wakatsuki, N. T. Binh, N. Usami, and Y. Segawa, Thin Solid Films 449, 12 (2004).
24. M. Hawley, I. D. Raistrick, J. G. Beery, and R. J. Houlton, Science 251, 1587 (1991).