Modulation of luminescence emission spectra of N-doped ß-Ga2O3 nanowires by thermal evaporation

Thin Solid Films

Volumn 518, Issue 5, 2009, Pages 1434-1438

  Chang, Li Wei ^a   Yeh, Jien Wei ^a   Li, Ching Fei ^b   Huang, Meng Wen ^b   Shih, Han C ^a,c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c CHINESE CULTURE UNIVERSITY   (Taiwan)

Author keywords

Cathodoluminescence; Gallium oxide; Nanowires

Indexed keywords

GALLIUM OXIDE; GROWTH DIRECTIONS; LUMINESCENCE EMISSION; MEAN DIAMETER; N-DOPED; NITROGEN DOPANT; P-TYPE SI; RED-LIGHT EMISSION; SELECTED AREA DIFFRACTION; TEM; UV- AND; XRD ANALYSIS;

CATHODOLUMINESCENCE; DOPING (ADDITIVES); ELECTRIC WIRE; EMISSION SPECTROSCOPY; LIGHT; LIGHT EMISSION; NANOWIRES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; THERMAL EVAPORATION; VAPORS;

GALLIUM;

EID: 70449467735     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.064     Document Type: Article

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