Photoluminescence of Ga-doped ZnO nanorods prepared by chemical vapor deposition

Optical Materials

Volumn 31, Issue 2, 2008, Pages 237-240

  Zhu, Liping ^a   Li, Jiesheng ^a   Ye, Zhizhen ^a   He, Haiping ^a   Chen, Xiaojun ^a   Zhao, Binghui ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Chemical vapor deposition; Crystal structure; Nanostructure; Photoluminescence

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; NANORODS; NANOSTRUCTURES; PHOTOLUMINESCENCE; TEMPERATURE; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

ALIGNED NANORODS; DIFFRACTION PEAKS; DONOR-BOUND EXCITON; GA-DOPED ZINC OXIDES; GA-DOPED ZNO; LOW TEMPERATURES; PHOTOLUMINESCENCE MEASUREMENTS; SECONDARY PHASE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 55949126623     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2008.03.015     Document Type: Article

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