Effects of substrate temperature and Zn addition on the properties of Al-doped ZnO films prepared by magnetron sputtering

Applied Surface Science

Volumn 255, Issue 16, 2009, Pages 7251-7256

  Kim, Y H ^a,b   Lee, K S ^a   Lee, T S ^a   Cheong, B ^a   Seong, T Y ^b   Kim, W M ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

Al doped ZnO; Deposition temperature; Magnetron sputtering; Transparent conducting oxide; Zn addition

Indexed keywords

ALUMINUM COMPOUNDS; ETCHING; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; OPTICAL FILMS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; STRUCTURAL PROPERTIES; SUBSTRATES; TRANSPARENT CONDUCTING OXIDES; ZINC; ZINC OXIDE;

AL-DOPED ZNO; DEPOSITION TEMPERATURES; DIFFERENT SUBSTRATES; ELECTRICAL , OPTICAL AND STRUCTURAL PROPERTIES; ELEVATED TEMPERATURE; ETCHING CHARACTERISTICS; RADIO FREQUENCY MAGNETRON SPUTTERING; SUBSTRATE TEMPERATURE;

FILM PREPARATION;

EID: 67349207385     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.03.075     Document Type: Article

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