Stress-induced device degradation due to die-attachment process after area bump formation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2262-2265

  Shimoyama, Nobuhiro ^a   Machida, Katsuyuki ^a   Shimaya, Masakazu ^a   Kyuragi, Hakaru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Annealing; Device degradation; Die attachment; MOSFET; Stress

Indexed keywords

EID: 0343166151     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2262     Document Type: Article

References (8)

1. S. Kimijima, T. Miyagi, T. Sudo and O. Shimada: Proc. Int. Society for Hybrid Microelectronics (ISHM) (1988) p. 33.
2. R. F. Cooley: Proc. Int. Society for Hybrid Microelectronics (ISHM) (1994) p. 473.
3. T. B. Ching and W. H. Schroen: Proc. Int. Reliability Phy. Symp. (1988) p. 64.
4. A. Hamada, T. Furusawa, N. Saito and E. Takeda: IEEE Trans. Electron Devices ED-38 (1991) 895.
5. N. Shimoyama, K. Machida, M. Shimaya, H. Akiya and H. Kyuragi: Proc. Int. Reliability Phy. Symp. (1997) p. 118.
6. A. B. Elliot: Solid-State Electron. 19 (1976) 241.
7. H. Miura and A Nishimura: J. Jpn. Soc. Mech. Eng. (Nihon-Kikai Gakkai) 61 (1995) 1957 (in Japanese).
8. A. Hamada and E. Takeda: Proc. VLSI Tech. Symp. (1992) p. 98.