Optical properties of columnar InAs quantum dots on InP for semiconductor optical amplifiers

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Kawaguchi, Kenichi ^a   Yasuoka, Nami ^a,b   Ekawa, Mitsuru ^a   Ebe, Hiroji ^c   Akiyama, Tomoyuki ^d   Sugawara, Mitsuru ^a,d   Arakawa, Yasuhiko ^c,e,f  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Optoelectronic Industry and Technology Development Association   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d QD Laser Inc   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

^f INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; INDIUM ARSENIDE; OPTICAL MATERIALS; OPTICAL PROPERTIES; OPTICAL SWITCHES; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; POLARIZATION; QUANTUM ELECTRONICS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR OPTICAL AMPLIFIERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; VAPOR PHASE EPITAXY;

INAS QUANTUM DOTS; METAL-ORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE PEAK WAVELENGTH; POLARIZATION SENSITIVITY; QUANTUM DOTS; SEMI-CONDUCTOR OPTICAL AMPLIFIER;

LIGHT AMPLIFIERS;

EID: 52949113810     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2990620     Document Type: Article

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