Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate

Applied Physics Letters

Volumn 74, Issue 12, 1999, Pages 1680-1682

  Lacombe, D ^a   Ponchet, A ^a   Frechengues S ^b   Drouot, V ^b   Bertru, N ^b   Lambert, B ^b   Le Corre, A ^c  

^a CEMES CNRS   (France)

^b INA Rennes   (France)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GAS SOURCE MOLECULAR BEAM EPITAXY (MBE);

SEMICONDUCTOR GROWTH;

EID: 0032620452     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123653     Document Type: Article

References (20)

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16. On the other hand, the same low-index facets as here were reported for InAs islands grown on (112)B GaAs; the facet inclination was 19°, 30°, and 35°, i.e., not very steep: S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno, Appl. Phys. Lett. 70, 2738 (1997).
17. el by the finite-element method, using anisotropic elasticity and found that it is slightly smaller for the (113)B substrate than for (001), for the same island shape. Therefore, this cannot account for the easier formation of islands on (113)B.
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20. The competition between different facets of low index was also discussed in Ref. 17 in the case of InAs islands on (001) GaAs.