Total ionizing dose and displacement-damage effects in microelectronics

MRS Bulletin

Volumn 28, Issue 2, 2003, Pages 136-140

  Foster, Charles C ^a  

^a NONE

Author keywords

Displacement damage; Electrical properties; Microelectronics; Non ionizing energy loss (NIEL); Radiation effects; Semiconductors; Soft errors; Total ionizing dose (TID) effects

Indexed keywords

ATOMS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRONICS PACKAGING; NEUTRONS; RADIATION DAMAGE;

DISPLACEMENT DAMAGE EFFECTS; GATE OXIDE LAYERS; NON IONIZING ENERGY LOSS; SINGLE EVENT PHENOMENA;

MICROELECTRONICS;

EID: 0037291857     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2003.42     Document Type: Article

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